Long-Wave Infrared Photodetectors Based on 2D Platinum Diselenide atop Optical Cavity Substrates

نویسندگان

چکیده

Long-wave infrared (LWIR) photodetection is of high technological importance, having a wide range applications that include thermal imaging and spectroscopy. Two-dimensional (2D) noble-transition-metal dichalcogenides, platinum diselenide (PtSe2) in particular, have recently shown great promise for detection. However, previous studies mainly focused on wavelengths up to the short-wave region. In this work, we demonstrate LWIR photodetectors based multilayer PtSe2. addition, present an optical cavity substrate enhances light–matter interaction 2D materials thus their performance spectral The PtSe2 photoconductors fabricated TiO2/Au exhibit responsivities 54 mA/W illumination at wavelength 8.35 μm. Moreover, these devices show fast photoresponse with time constant ns white light illumination. findings study reveal potential broadband from visible wavelengths.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Platinum germanides for mid- and long-wave infrared plasmonics.

Platinum germanides (PtGe) were investigated for infrared plasmonic applications. Layers of Pt and Ge were deposited and annealed. X-ray diffraction identified PtGe(2) and Pt(2)Ge(3) phases, and x-ray photo-electron spectroscopy determined vertical atomic composition profiles for the films. Complex permittivity spectra were measured by ellipsometry over the 2 to 15 μm wavelength range. Surface ...

متن کامل

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can b...

متن کامل

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices.

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to ...

متن کامل

Periodic Travelling Wave Photodetectors with Serial and Parallel Optical Feed Based on InP

In this work, monolithically integrated, periodic travelling wave photodetectors with parallel and serial optical feed for high-speed and high-power applications at 1.55 μm wavelength are developed and characterized. The studied photodetectors are based on discrete, miniaturized evanescently coupled p-i-n photodiodes, which are distributed along a coplanar waveguide and thus form a travelling w...

متن کامل

Electrical and optical characteristics of InP Interband Nanowire Infrared Photodetectors

3 Description of cover page picture: Test sample of InP nanowire 4 Preface First of all we would like to show our deepest gratitude to our supervisor and mentor Dr. Lars Landin and we are also grateful to him for his precious time and cordial help in a number of ways. We are extremely glad that he has made it possible for us to work in this new photodetector technology project based on nanowire...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: ACS Nano

سال: 2021

ISSN: ['1936-0851', '1936-086X']

DOI: https://doi.org/10.1021/acsnano.0c09739